+28V Powered Wideband GaN Power Transistors

CGH40XXX Series by Wolfspeed (formerly Cree)
The ​CGH40XXX series of ​Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) delivers exceptional performance for microwave and RF applications, operating at ​**+28V supply voltage**. These transistors combine ​high efficiency, ​high gain, and ​wide bandwidth, making them ideal for linear and compressed amplifier circuits.

CG2H40XXX Series – Second Generation
The ​CG2H40XXX series represents Wolfspeed’s second-generation GaN HEMTs, offering ​enhanced performance and serving as a direct upgrade to the first-generation CGH40XXX models.

CMPA Series – MMIC-Based GaN HEMTs
The ​CMPA series utilizes ​Monolithic Microwave Integrated Circuit (MMIC) technology with a ​distributed (traveling-wave) amplifier design, achieving maximized bandwidth. These devices feature ​compact package footprints and efficient thermal management via a ​copper-tungsten (CuW) alloy base for optimal heat dissipation.

Key Features:

• ​Voltage Operation: +28V for robust power handling.
• ​Bandwidth: Broad frequency coverage for versatile RF/microwave systems.
• ​Thermal Design: CuW alloy base ensures reliability under high-power conditions.

Applications:

• ​Land Mobile Radio (LMR)
• ​Broadband Amplifiers
• ​Cellular Infrastructure (4G/5G)
• ​Test & Measurement Equipment
• ​Class A/AB Amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Represented Brand: ​Wolfspeed