+50V Broadband GaN Power Transistors

CREE CGHV40XXX Series
The ​CGHV40XXX Series by CREE comprises high-performance ​Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) optimized for ​**+50V operation**. These transistors deliver a versatile solution for diverse microwave and RF applications, combining ​high efficiency, ​exceptional gain, and ​broad bandwidth, making them ideal for both ​linear and compressed amplifier circuits.

CREE CHVXX060MP Series
The ​CHVXX060MP Series offers ​60W GaN HEMTs in a compact ​4.4mm × 6.5mm surface-mount plastic package. Available in two variants:

1. ​CHV27060MP:
   • ​No Pre-Matching: Enables flexible deployment across ​UHF to 2.7 GHz (e.g., UHF, L, S bands).
   • ​Optimized for LTE Microcell Amplifiers: Ideal for ​10–15W power levels in small-cell infrastructure.
2. ​CGHV35060MP:
   • ​Input Pre-Matching: Tailored for ​2.7–3.5 GHz (e.g., 2.7–3.1 GHz and 3.1–3.5 GHz bands).
   • ​Peak Efficiency: Delivers superior performance in targeted frequency ranges.

Applications:

• ​Two-Way Land Mobile Radio (LMR): Critical for public safety and defense communications.
• ​Broadband Amplifiers: Multi-carrier RF signal amplification.
• ​Cellular Infrastructure: Macro/micro base stations, mMIMO systems.
• ​Test Instrumentation: High-power RF signal generation and validation.
• ​Class A/AB Amplifiers: Compatible with ​OFDM, W-CDMA, EDGE, and CDMA waveforms.

Represented Brands：Wolfspeed