CREE CGHV1FXXX Series
The ​CGHV1FXXX Series by CREE features ​Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) engineered for ​high efficiency, high gain, and broadband performance across ​L, S, C, X, and Ku bands. Operating at ​+40V with a compact ​3mm × 4mm leadless DFN package, these transistors support ​surface-mount installation for simplified assembly. For reduced power consumption, they can operate down to ​+20V while maintaining ​high gain and efficiency.

Applications:

• ​Broadband Amplifiers: Multi-carrier signal amplification in defense and telecom.
• ​Class A/AB Amplifiers: Critical for ​cellular infrastructure (e.g., macro/micro base stations).
• ​Satellite Communications: High-efficiency RF chains in Ku-band payloads.

Represented Brands：Wolfspeed